Datasheet4U Logo Datasheet4U.com

NE851M03 - NPN SILICON TRANSISTOR

General Description

NEC's NE851M03 transistor is designed for oscillator applications up to 3 GHz.

Key Features

  • NEW.

📥 Download Datasheet

Datasheet Details

Part number NE851M03
Manufacturer CEL
File Size 496.67 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet NE851M03 Datasheet

Full PDF Text Transcription for NE851M03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE851M03. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE851M03 FEATURES • NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat le...

View more extracted text
all transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS LOW 1/f NOISE LOW PUSHING FACTOR 1.4 ±0.1 0.45 (0.9) OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 • • • 80 0.45 1 +0.1 0.2 -0 3 0.3 +0.1 -0 DESCRIPTION NEC's NE851M03 transistor is designed for oscillator applications up to 3 GHz. The NE851M03 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's low profile/flat lead style "M03" package is ideal for today's portable wireless applications. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIO

More Datasheets from CEL

Part Number Description
NE851M13 NPN SILICON TRANSISTOR
NE851M33 NPN SILICON TRANSISTOR
NE85619 NPN SILICON EPITAXIAL TRANSISTOR
NE85619-A NPN SILICON EPITAXIAL TRANSISTOR
NE85619-T1-A NPN SILICON EPITAXIAL TRANSISTOR
NE85634 NPN SILICON RF TRANSISTOR
NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER