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NE85619-T1-A Datasheet - CEL

NPN SILICON EPITAXIAL TRANSISTOR

NE85619-T1-A Features

* Low Voltage Use.

* High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

* Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

* Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

* High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

NE85619-T1-A General Description

The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pass.

NE85619-T1-A Datasheet (4.33 MB)

Preview of NE85619-T1-A PDF

Datasheet Details

Part number:

NE85619-T1-A

Manufacturer:

CEL

File Size:

4.33 MB

Description:

Npn silicon epitaxial transistor.

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TAGS

NE85619-T1-A NPN SILICON EPITAXIAL TRANSISTOR CEL

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