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NE85619-T1-A - NPN SILICON EPITAXIAL TRANSISTOR

Download the NE85619-T1-A datasheet PDF (NE85619 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn silicon epitaxial transistor.

Description

fromVHF band to UHF band.

Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Features

  • Low Voltage Use.
  • High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
  • Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz).
  • Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
  • High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
  • Ultra Super Mini Mold Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NE85619-CEL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NE85619-T1-A
Manufacturer CEL
File Size 4.33 MB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet NE85619-T1-A Datasheet

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Full PDF Text Transcription

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SILICON TRANSISTOR NE85619 / 2SC5006 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique. +0.1 –0 0.3 +0.1 –0.05 FEATURES • Low Voltage Use. • High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • High |S21e|2: 9 dB TYP.
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