NMOS-power Datasheet | Specifications & PDF Download

The Leader in High Temperature Semiconductor Solutions CHT-NMOS80XX DATASHEET Version: 2.8 26-Mar-15 (Last Modification Date) High-Temperature, 8

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ITS4200S-ME-O Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch ITS4200S-ME-O 1 Ove

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TS2301BE Single P -Channel Power MOSFET VDSS（V） RDS (ON) ID(A) 95mΩ(Typ)@VGS=-4.5V -20 -2.8 123mΩ(Typ)@VGS=-2.5V FEATURE: • The TS2301BE uses

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TS08N03N3 Single N-Channel Power MOSFET VDSS（V） 30 RDS (ON) 9mΩ(Typ)@VGS=10V 11mΩ(Typ)@VGS=4.5V ID(A) 30 Pin Description FEATURE: • The TS08N03N

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ITS4200S-ME-P Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch ITS4200S-ME-P 1 Ove

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ITS4100S-SJ-N Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch ITS4100S-SJ-N 1 Ove

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ITS42008-SB-D Smart Octal High-Side NMOS-Power Switch Data Sheet Rev 1.01, 2014-05-19 Standard Power Smart Octal High-Side NMOS-Power Switch ITS4200

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ITS41k0S-ME-N Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch ITS41k0S-ME-N 1 Ove

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ITS4200S-ME-N Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch ITS4200S-ME-N 1 Ove

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The Leader in High Temperature Semiconductor Solutions CHT-NMOS40XX - DATASHEET Version: 03.9 26-Mar-15 (Last Modification Date) High-Temperature,

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The Leader in High Temperature Semiconductor Solutions CHT-NMOS40XX - DATASHEET Version: 03.9 26-Mar-15 (Last Modification Date) High-Temperature,

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The Leader in High Temperature Semiconductor Solutions CHT-NMOS80XX DATASHEET Version: 2.8 26-Mar-15 (Last Modification Date) High-Temperature, 8

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sales.Mr.wang13826508770 www.sztssd.com Silicon N-Channel Power MOSFET NS10N65K General Description： NS10N65K , the silicon N-channel Enhanced VDMO

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TS2300E Single N-Channel Power MOSFET VDSS（V） 20 RDS (ON) 21mΩ(Typ)@VGS=4.5V 29mΩ(Typ)@VGS=2.5V ID(A) 5.2 FEATURE: • The TS2300E is the high cell

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TS520P10E Single P-Channel Power MOSFET VDSS（V） RDS (ON) ID(A) 520mΩ(Typ)@VGS=-10V -100 -1 560mΩ(Typ)@VGS=-4.5V FEATURE: • The TS520P10Eis the

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BTS41k0S-ME-N Smart High-Side NMOS-Power Switch Datasheet Rev 1.1, 2012-05-08 Automotive Power BTS41k0S-ME-N Table of Contents Table of Contents 1 Ov

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The Leader in High Temperature Semiconductor Solutions CHT-NMOS40XX - DATASHEET Version: 03.9 26-Mar-15 (Last Modification Date) High-Temperature,

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Smart high-side NMOS-power switch ITS4200S-SJ-D Features • CMOS compatible input • Switching all types of resistive, inductive and capacitive loads •

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ITS4300S-SJ-D Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch ITS4300S-SJ-D 1 Ove

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TS14V06N3 Dual N-Channel Power MOSFET VDSS（V） RDS (ON) ID(A) 16mΩ(Typ)@VGS=10V 60 20 19mΩ(Typ)@VGS=4.5V FEATURE: • The GNJ14V06N is the high c

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