Numonyx Datasheet | Specifications & PDF Download

Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) 32, 64, and 128 Mbit Datasheet Product Features „ Architecture — Symmetrical 128-

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M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V

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M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Features Supply voltage – VDD = 2.7

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M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit (1 Mbit×8 / 512 Kbit×16); 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Feature

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Numonyx™ StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features „ Architecture — Multi-Level Cell Technology: Highest Density at

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Numonyx™ StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features „ Architecture — Multi-Level Cell Technology: Highest Density at

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M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V

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M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V

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NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Features ■ High density NAND flash memories – Up to 2

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NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Features ■ High density NAND flash memories – Up to 2

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www.DataSheet4U.com Intel® Embedded Flash Memory (J3 v. D) (32, 64, and 128 Mbit) Datasheet Product Features ■ ■ Architecture — High-density symm

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N25Q128 128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface Features

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Numonyx® Forté™ Serial Flash Memory M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features „ 16 Mbit of Flash memory „ Page Program (u

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M25P128 128-Mbit, low-voltage, serial flash memory with 54-MHz SPI bus interface Features „ 128-Mbit flash memory „ 2.7 to 3.6 V single supply voltage

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M29W640FT M29W640FB 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Feature summary Supply voltage – VCC = 2.7V to 3.6V for Prog

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M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface Preliminary Data Features ■ SPI bus compatible

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NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● High density NAND Fla

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NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● High density NAND Fla

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M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block) 3 V supply flash memory Feature „ Supply volta

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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) 32, 64, and 128 Mbit Datasheet Product Features „ Architecture — Symmetrical 128-

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