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BD243 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS).LM317BD2T - Positive Voltage Regulator
Voltage Regulator – Adjustable Output, Positive 1.5 A LM317, NCV317 The LM317 is an adjustable 3−terminal positive voltage regulator capable of supp.BD243C - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS).BD202 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor BD202/204 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202 -60V(Min)- BD204 ·Complem.BD263 - Silicon NPN Power Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ I.BD235 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD.NCV317BD2T - Positive Voltage Regulator
Voltage Regulator – Adjustable Output, Positive 1.5 A LM317, NCV317 The LM317 is an adjustable 3−terminal positive voltage regulator capable of supp.BD203 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD201/203 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complemen.BD201 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD201/203 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complemen.SMBD2837 - Silicon Switching Diode Array
Silicon Switching Diode Array SMBD 2837 SMBD 2838 For high-speed switching applications q Common cathode q Type SMBD 2837 SMBD 2838 Marking sA5 sA.BD243A - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS).BD239 - NPN Transistor
BD239/A/B/C BD239/A/B/C Medium Power Linear and Switching Applications • Complement to BD240/A/B/C respectively 1 TO-220 2.Collector 3.Emitter NPN.BD243A - NPN Epitaxial Silicon Transistor
BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 2.Col.BD204 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor BD202/204 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202 -60V(Min)- BD204 ·Complem.BD245D - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE>40@IC = 1A ·Collector-Emitter Saturation Voltage-.BD246A - PNP SILICON POWER TRANSISTORS
BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power t.BD229 - (BD2xx) Small-signal Transistors
Philips Semiconductors Small-signal Transistors LEADED DEVICES (continued) PNP GENERAL PURPOSE POWER TRANSISTORS TYPE NUMBER BD132 BD136 BD136-10 BD1.BD249C - NPN High-Power Transistor
BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings.BD236 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD234/236/238 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type B.BD239B - NPN Transistor
BD239/A/B/C BD239/A/B/C Medium Power Linear and Switching Applications • Complement to BD240/A/B/C respectively 1 TO-220 2.Collector 3.Emitter NPN.