P75N06 Datasheet | Specifications & PDF Download

NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications

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SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 0.0085 @ VGS = 4.5 V rDS(on) (W) 0.0075 @ VGS =

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON

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SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 60 TO-220AB TO-263 G DRAIN connected to TAB G D S Top View SUB75N0

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SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.008 ID (A) 75a TO-220AB D TO-2

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N06HD/D Designer's HDTMOS E-FET ™ High Density Power FET N–Channel Enhancement–M

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PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanced Trench Process Tec

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CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for e

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CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for

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www.DataSheet4U.com PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanc

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SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.012 @ VGS = 10 V 0.014 @ VGS = 4.

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MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N−Channel, TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and com

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