PA08 Datasheet | Specifications & PDF Download

POWER OPERATIONAL AMPLIFIERS PA08 • PA08A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX (800) 546-2739 FEATURES • • •

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www.DataSheet4U.com PA0853DG-41 DROP-IN ISO-ATTENUATOR Features • • • • Low Cost Industry Standard 1 Inch Drop-in package Designed for Wireless Telec

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www.DataSheet4U.com PA0853DG-41H DROP-IN ISO-ATTENUATOR Features • • • • Low Cost and RoHS Compliant Industry Standard 1 Inch Drop-in package Designe

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PA080XS1 Version : 0.2 TECHNICAL MODEL SPECIFICATION NO. : PA080XS1 Customer’s Confirmation Customer Date By PVI’s Confirmation Confirmed By P

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DATA SHEET METAL LOW OHMIC JUMPER PA series sizes 0201/ 0402/ 0603/ 0805 RoHS compliant & Halogen free Product specification – October 05, 2018 V.0

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POWER OPERATIONAL AMPLIFIERS PA08 • PA08A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX (800) 546-2739 FEATURES • • •

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RFPA0802 RFPA0802 Integrated Power Amplifier 700MHz to 950MHz The RFPA0802 has over 28dB of small signal gain over 700MHz to 950MHz. When used with D

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w w w t a .D S a e h U 4 t e .c m o www.DataSheet4U.com

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RFMD + TriQuint = Qorvo RFPA0875 Integrated Power Amplifier Module 869MHz to 894MHz The RFPA0875 is a two-stage power amplifier (PA) designed for Sma

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IPA083N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p

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QPA0812 ® 1 Watt X-Band Power Amplifier Product Overview Qorvo's QPA0812 is a packaged, high performance power amplifier fabricated on Qorvo's prod

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PPN7 Outline .5 30¡ ¿1 0 4 ¿1 5 23¡ ¿4.7 ¿1 .5 ¿1.5 1.3 8 .2 NAME PRINTING ¿5 3 t 0. 1.5 12max 2-M2 a 18.6 0.75 2.2 1.5 UNIT: mm DC S

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 100V OptiMOS™3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4

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isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Swi

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA083N10N5 ·FEATURES ·With To-220F package ·Low input capacitance and gate charge ·Low gate

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 100V OptiMOS™3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 7.6A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drai

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SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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