POWER OPERATIONAL AMPLIFIERS PA50 • PA50A M I C.
IPA50R800CE - MOSFET
IPA50R800CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.IPA50R140CP - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.OPA502 - High Current / High Power OPERATIONAL AMPLIFIER
® OPA502 High Current, High Power OPERATIONAL AMPLIFIER FEATURES q HIGH OUTPUT CURRENT: 10A q WIDE POWER SUPPLY VOLTAGE: ±10V to ±45V q USER-SET CUR.UPA504T - NPN / PNP Transistor
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OK 1 4 7 C 2 5 8 0 3 6 9 N TV Operating Instructions Progressive Wide Plasma Television Model No. TH-37PA50E TH-42PA50E TH-37PA40E TH-42PA40E .APA501 - Heatsinks
AMPSS Astec Modular Power Supply System ™ APA501 Series Heatsinks for Power Modules Technical Reference Manual Series Highlights • Horizontal, Vert.IPA50R280CE - MOSFET
IPA50R280CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.IPA50R190CE - MOSFET
IPA50R190CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.PA5005.122NLT - SMT Power Inductors
SMT Power Inductors High Current Composite Inductor - PA5005.XXXNLT and PM2205.XXXNLT Height: 5.0mm Max Footprint: 6.8mm x 6.6mm Max Current Rating: .PA5001.122NLT - SMT Power Inductors
SMT Power Inductors High Current Composite Inductor - PA5001.XXXNLT and PM2201.XXXNLT Height: 2.1mm Max Footprint: 4.3mm x 4.3mm Max Current Rating: .PA5001.471NLT - SMT Power Inductors
SMT Power Inductors High Current Composite Inductor - PA5001.XXXNLT and PM2201.XXXNLT Height: 2.1mm Max Footprint: 4.3mm x 4.3mm Max Current Rating: .PA5001.401NLT - SMT Power Inductors
SMT Power Inductors High Current Composite Inductor - PA5001.XXXNLT and PM2201.XXXNLT Height: 2.1mm Max Footprint: 4.3mm x 4.3mm Max Current Rating: .IPA50R950CE - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.IPA50R199CP - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.DIM650H2HS17-PA500 - Half Bridge IGBT
Replaces DS6303-1 TRENCH Gen5 TMOS DIM650H2HS17-PA500 Half Bridge IGBT Module DS6303-2 February 2020 (LN39622) FEATURES Trench Gate IGBT Cu Bas.TPA5050 - STEREO DIGITAL AUDIO LIP-SYNC DELAY
TPA5050 TPA5050 www.ti.com SLOS492B – MAY 2006 – REVISED MAY 2007 STEREO DIGITAL AUDIO LIP-SYNC DELAY WITH I2C CONTROL FEATURES • Digital Audio F.TPA50R5K4C - 500V Super-Junction Power MOSFET
TPA50R5K4C, TPP50R5K4C, TPU50R5K4C, TPD50R5K4C Wuxi Unigroup Microelectronics Company 500V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on).OPA503 - Ultra-Low-Power Operational Amplifiers
OPA503/OPA504 5V, High-Precision, Ultra-Low-Power Operational Amplifiers 1. FEATURES • Nanopower supply current: 570nA/channel • Offset voltage: 210μ.PA504EV - P-Channel MOSFET
PA504EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 150mΩ @VGS = -10V ID -2.7A SOP- 8 ABSOLUTE MAXIMUM RATINGS (TA.IPA50R250CP - Power Transistor
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