.
Vishay Siliconix
SI6968BEDQ_RC - R-C Thermal Model Parameters
Si6968BEDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve.
Vishay
SI7431DP_RC - R-C Thermal Model Parameters
Si7431DP_RC Vishay Siliconix www.DataSheet4U.com R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been d.APD032 - PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS
INTRODUCTION PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS 1. Parameter Definitions: A = Distance from top of chip to top of glass. a = Photodiode .
Samsung semiconductor
MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR16R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR18R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Samsung semiconductor
MR16R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM.
Vishay Siliconix
SI7415DN-RC - R-C Thermal Model Parameters
www.DataSheet4U.com Si7415DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been .
Vishay Siliconix
SI7136DP-RC - R-C Thermal Model Parameters
www.DataSheet4U.com Si7136DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been .
Vaishali Semiconductor
SI5484DU-RC - R-C Thermal Model Parameters
www.DataSheet4U.com Si5484DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been .
Samsung semiconductor
MR16R1624GEG0 - Key Timing Parameters
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288.
Vaishali Semiconductor
SI4684DY_RC - R-C Thermal Model Parameters
Si4684DY_RC Vishay Siliconix www.DataSheet4U.com R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been d.
Vishay
SI4496DY - R-C Thermal Parameters
www.DataSheet.co.kr Si4496DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been .KD210A1 - The letter designation of parameters for rectifier diodes
КД210А1, КД210Б1, КД210В1, КД210Г1 Буквенное обозначение параметров для выпрямительных диодов Uобр.и.max - максимально допустимое импульсное напряжен.
