PD150 Datasheet | Specifications & PDF Download

PD1503YVS Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) Q2 30V 15.8mΩ @VGS = 10V Q1 30V 21.0mΩ @VGS = 10V ID 9A 8A SO

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ FORWARD CURRENT VS. VOLTAGE 5000 2000 AVERAGE FORWARD POWER DISSIPATION PD150S16 Pe

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DATA SHEET APD Series: Silicon PIN Diode Bondable Chips Applications  Switches  Attenuators Features  Established Skyworks PIN diode process  Low

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DIODE MODULE FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 150

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Data Sheet PD1500U03W Power Divider/Combiner 2-Way 0° 50Ω 1.0-2.0 GHz Key Patents Lead Microwave Tech Features ● Small Size (2×2mm DFN package) ● No

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Data Sheet PD1500U03-140 Power Divider/Combiner 2-Way 0° 50Ω 1.35-1.65 GHz Key Patents Lead Microwave Tech Features ● Small Size (2×2mm DFN package)

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PD1503BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 15mΩ @VGS = 10V ID 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 2

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PD1503YVS-A Dual N- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 15.5mΩ @VGS = 10V 9A Q1 30V 18mΩ @VGS = 10V 8A S

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Version :0.2 PD150XL1 Preliminary TECHNICAL SPECIFICATION MODEL NO : PD150XL1 Customer’s Confirmation Customer Date By PVI’s Confirmation The infor

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DIODE MODULE FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 150

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ FORWARD CURRENT VS. VOLTAGE 2000 1000 AVERAGE FORWARD POWER DISSIPATION PD150S8 Per

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NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor PD1503YVS SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS Q2 Q1 30V 30V R

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LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT FPD1500SOT89 • PERFORMANCE (1850 MHz) ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.

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Grade Parameter *1 Repetitive Peak Reverse Voltage *1 Non Repetitive Peak Reverse Voltage VRSM 900 V Symbol VRRM PD150KN8 800 Unit V Parameter *1 Ave

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DATA SHEET APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices Applications  Switches  Attenuators Features  Established PIN diode proc

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FPD1500DFN LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES (1850MHZ): • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noi

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1W PACKAGED POWER PHEMT • FEATURES ♦ 29.5 dBm Linear Output Power ♦ 18 dB Power Gain at 2 GHz ♦ 10.5 dB Maximum Stable Gain at 10 GHz ♦ 39 dBm Output

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DIODE MODULE FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 150

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Grade Parameter *1 Repetitive Peak Reverse Voltage *1 Non Repetitive Peak Reverse Voltage VRSM 1700 V Symbol VRRM PD150KN16 1600 Unit V Parameter *1

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