PINGWEI Datasheet | Specifications & PDF Download

11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava

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2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avala

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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150N03(G,D)SL 150 Amps,30 Volts N-CHANNEL MOSFET Featutes  150A,30V,RDS(ON)MAX=2.5mΩ@VGS=10V/20A RDS(ON)MAX=2.8mΩ@VGS=4.5V/20A  Low gate charge  Lo

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avala

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70N03G 70 Amps,30 Volts N-CHANNEL MOSFET Featutes  70A,30V,RDS(ON)MAX=6.5mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% avalan

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PW038N10ESL Perfect MOS N-MOSFET 100V, 3.2mΩ, 100A Features Beneficts • Uses PingWei advanced PerfectMOS technology • High robustness and reliabi

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150N03(G,D)SL 150 Amps,30 Volts N-CHANNEL MOSFET Featutes  150A,30V,RDS(ON)MAX=2.5mΩ@VGS=10V/20A RDS(ON)MAX=2.8mΩ@VGS=4.5V/20A  Low gate charge  Lo

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4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava

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PESC0665MF PESC0665MF 6.0AMPS.SIC SCHOTTKY BARRIER DIODE FEATURE . 650V Schottky Diode . Zero Reverse Recovery/Zero Forward Recovery . High Effici

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2N65(F,B,H,G,D)S 2 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  2A,650V,RDS(ON)MAX=2.5Ω@VGS=10V/1A  Low gate charge  Low Ciss 

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2N60(F,B,H,G,D)S 2 Amps,600 Volts N-Channel Super Junction Power MOSFET FEATURE  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss 

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2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avala

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2N65(F,B,H,G,D)S 2 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  2A,650V,RDS(ON)MAX=2.5Ω@VGS=10V/1A  Low gate charge  Low Ciss 

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2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avala

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140N04(G,D)SL 140 Amps,40 Volts N-CHANNEL MOSFET Featutes  140A,40V,RDS(ON)MAX=2.8mΩ@VGS=10V/20A RDS(ON)MAX=3.2mΩ@VGS=4.5V/20A  Low gate charge  Lo

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2N65(F,B,H,G,D)S 2 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  2A,650V,RDS(ON)MAX=2.5Ω@VGS=10V/1A  Low gate charge  Low Ciss 

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