PNM Datasheet | Specifications & PDF Download

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Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N1 is composed by a transistor and a MOSFET Transistor:  Very low c

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www.vishay.com PNM Vishay Dale Thin Film Precision Thin Film Non-Magnetic Resistor, Surface Mount Chip, ± 25 ppm/°C, Tolerances to 0.1 % Actual Siz

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 50 MOSFET Product Summary R

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www.vishay.com PNM Vishay Dale Thin Film Precision Thin Film Non-Magnetic Resistor, Surface Mount Chip, ± 25 ppm/°C, Tolerances to 0.1 % Actual Siz

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PNM523T201E0-VB PNM523T201E0-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.270 at VGS = 4.5 V 20

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PNMT60V02 N-Channel MOSFET Description PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density

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PNM3FD703E0-2 N-Channel MOSFET Description PNM3FD703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.3@

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PNMT20V6 N-Channel MOSFET D（3） VDS(V) 20 MOSFET Product

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Description The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) 20

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www.vishay.com PNM Vishay Dale Thin Film Precision Thin Film Non-Magnetic Resistor, Surface Mount Chip, ± 25 ppm/°C, Tolerances to 0.1 % Actual Siz

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www.vishay.com PNM Vishay Dale Thin Film Precision Thin Film Non-Magnetic Resistor, Surface Mount Chip, ± 25 ppm/°C, Tolerances to 0.1 % Actual Siz

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www.vishay.com PNM Vishay Dale Thin Film Precision Thin Film Non-Magnetic Resistor, Surface Mount Chip, ± 25 ppm/°C, Tolerances to 0.1 % Actual Siz

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PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（2） VDS(V) 600

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PNMT6N2B Transistor with N-MOSFET Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N2B is composed by a transistor and

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Description The PNM8PN30V50A uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 30 MOSFET Product Summary R

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Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N2 is composed by a transistor and a MOSFET Transistor:  Very low c

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