PP6-5-5 Datasheet | Specifications & PDF Download

TPP60308 60-V 3.5-A Step-Down DC/DC Converter Features • High Efficiency at Light Loads with Pulse Skipping • 80-mΩ High-Side MOSFET • 160-μA Operat

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.2 Final Power Man

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CAT.NO.D-1001 P.1/5
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isc N-Channel MOSFET Transistor IPP60R190P6，IIPP60R190P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch

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IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω nC Features • Worldwide best R ds,on in TO220 •

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPP65R045C7 Data Sheet Rev. 2.0 Final Power Man

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IPP60R125CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current ca

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isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Swi

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isc N-Channel MOSFET Transistor IPP65R225C7，IIPP65R225C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.225Ω ·Enhancement mode ·Fast Switc

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Powe

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.3 Final Powe

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IPP60R060P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET

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isc N-Channel MOSFET Transistor IPP60R280P7，IIPP60R280P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switch

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isc N-Channel MOSFET Transistor IPP60R280E6，IIPP60R280E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switch

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isc N-Channel MOSFET Transistor IPP60R080P7，IIPP60R080P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.08Ω ·Enhancement mode ·Fast Switch

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.3 Final Powe

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TPA65R170M, TPP65R170M, TPV65R170M, TPW65R170M   Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES l   Very low FOM RDS

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