PP6-5-5 Datasheet | Specifications & PDF Download

TPP60508 60-V, 5-A, Non-Synchronous Step-Down DC/DC Converter Features • High Efficiency at Light Loads with Pulse Skipping • 80-mΩ High-Side MOSFET

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IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (

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IPP60R170CFD7 MOSFET 600V CoolMOSª CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qual

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R330P6 Data Sheet Rev. 2.2 Final Power Man

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isc N-Channel MOSFET Transistor IPP60R330P6，IIPP60R330P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.33Ω ·Enhancement mode ·Fast Switch

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isc N-Channel MOSFET Transistor IPP60R385CP，IIPP60R385CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.385Ω ·Enhancement mode ·Fast Switc

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isc N-Channel MOSFET Transistor IPP60R080P7，IIPP60R080P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.08Ω ·Enhancement mode ·Fast Switch

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AC/DC Medical Power Supply TPP 65E-D Series, 65 Watt • Compact encapsulated 65 Watt PCB module (3.2 x2.2 ) • I/O isolation 4000 VAC rated for 250 V

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AC/DC Medical Power Supply TPP 65E-J Series, 65 Watt • Compact encapsulated 65 Watt Chassis mount module (4.3 x2.2 ) • I/O isolation 4000 VAC rated

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Powe

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.2 Final Powe

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CAT.NO.D-1001 P.1/5
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Man

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TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C Wuxi Tongfang Microelectronics Company 600V Super-Junction Power MOSFET FEATURES  Very low FOM RDS(on)

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isc N-Channel MOSFET Transistor IPP60R099CP，IIPP60R099CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switc

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AC/DC Medical Power Supply TPP 65E-D Series, 65 Watt • Compact encapsulated 65 Watt PCB module (3.2 x2.2 ) • I/O isolation 4000 VAC rated for 250 V

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AC/DC Medical Power Supply TPP 65E-D Series, 65 Watt • Compact encapsulated 65 Watt PCB module (3.2 x2.2 ) • I/O isolation 4000 VAC rated for 250 V

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TPA60R350C,TPB60R350C,TPC60R350C,TPD60R350C, TPP60R350C,TPR60R350C,TPU60R350C,TPV60R350C Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Po

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GPP60A thru GPP60G New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 50 to 400 V Forward Current 6.0 A Case Style P60

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