www.DataSheet4U.com PT100 Platinum Resistance Tem.
Baumer
Pt100 - Cable Sensor
Cable Sensor, Pt100/Pt1000 Sensors with 4-wire silicone cable for pockets or tubes 4-wire air sensors Elements in 1/1 DIN B, 1/3 DIN B and 1/6 DIN B T.
RHOPOINT COMPONENTS
PT100 - Platinum Resistance Temperature Detector
www.DataSheet4U.com PT100 Platinum Resistance Temperature Detector 22810 “StikonTM” Model 22810 is a polyimide insulated surface sensor designed to p.
Advanced Power Technology
APT1001R1AVR - MOSFET
APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno.
Advanced Power Technology
APT1001R1BN - MOSFET
D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1.
Advanced Power Technology
APT1001R1BVFR - MOSFET
APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE.
SNB
SS1118 - Coarse type PT100 temperature sensor
Free Datasheet http://www.Datasheet4U.com 《SS1118 PT100 》 ：021-51083595 1118 PT100 SS SS1118 SS 1118 SS1118 - PT100 - - - -IP IP67 - -， - 1.
Baumer
Pt1000 - Cable Sensor
Cable Sensor, Pt100/Pt1000 Sensors with 4-wire silicone cable for pockets or tubes 4-wire air sensors Elements in 1/1 DIN B, 1/3 DIN B and 1/6 DIN B T.
Heraeus
2Pt100KN1017 - Ceramic Wire
2 Pt100 KN 1017 The KN Series Ceramic Wire Wound PRTDs are suitable for general applications requiring temperature stability. The dual sensor can be u.
Heraeus
2Pt100K2517 - Ceramic Wire
2 Pt100 K 2517 The K Series Ceramic Wire Wound PRTDs are suitable for resistance thermometers requiring extremely temperature stability over 800oC an.
Advanced Power Technology
APT1001R1HVR - MOSFET
APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new t.
Advanced Power Technology
APT1001R3BN - MOSFET
D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1.
Advanced Power Technology
APT1001R6BN - MOSFET
D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10.
Advanced Power Technology
APT1001RBLC - MOSFET
APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channe.
Advanced Power Technology
APT1001RSLC - MOSFET
APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channe.
Advanced Power Technology
APT1001RSVR - MOSFET
APT1001RSVR 1000V 11A 1.000Ω POWER MOS V ® D3PAK Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new te.
Advanced Power Technology
APT10021JFLL - MOSFET
APT10021JFLL 1000V 37A 0.210W POWER MOS 7TM FREDFET S G D S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode.
Advanced Power Technology
APT10021JLL - MOSFET
APT10021JLL 1000V 37A 0.210W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Bot.
