PT100 Datasheet | Specifications & PDF Download

Cable Sensor, Pt100/Pt1000 Sensors with 4-wire silicone cable for pockets or tubes 4-wire air sensors Elements in 1/1 DIN B, 1/3 DIN B and 1/6 DIN B T

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General-Purpose Silicon PlanarPhototransistor Optoelectronic Products 4-35 FPT100/A/B FPT110/A/B General Description The FPT 100 and FPT 11 0 are 3-

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General-Purpose Silicon PlanarPhototransistor Optoelectronic Products 4-35 FPT100/A/B FPT110/A/B General Description The FPT 100 and FPT 11 0 are 3-

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Cable Sensor, Pt100/Pt1000 Sensors with 4-wire silicone cable for pockets or tubes 4-wire air sensors Elements in 1/1 DIN B, 1/3 DIN B and 1/6 DIN B T

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1200V APT100GT120JRDL www.DataSheet4U.com Resonant Mode IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high volt

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VPT100-2800S Series HIGH RELIABILITY COTS DC-DC CONVERTERS DESCRIPTION The VPT100 series of isolated COTS DC-DC converters is a cost effective soluti

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APT10090BLL APT10090SLL 1000V 12A 0.950Ω POWER MOS 7 MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode po

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2 Pt100 KN 1017 The KN Series Ceramic Wire Wound PRTDs are suitable for general applications requiring temperature stability. The dual sensor can be u

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2 Pt100 K 2517 The K Series Ceramic Wire Wound PRTDs are suitable for resistance thermometers requiring extremely temperature stability over 800oC an

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General-Purpose Silicon PlanarPhototransistor Optoelectronic Products 4-35 FPT100/A/B FPT110/A/B General Description The FPT 100 and FPT 11 0 are 3-

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APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno

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D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1

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APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE

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APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new t

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D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1

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D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10

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APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channe

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D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT50

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APT1001RBVR 1000V 11A 1.000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno

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