.
Panasonic
74
MIP2F2 - Intelligent Power Device (IPD)
インテリジェントパワーデバイス (IPD) MIP2F20MS シリコン MOS のを のをに になを の, にえ, (フ の ) とを ( ほか ) ACアダプタ Ta = 25°C±3°C ドレイン VCC VDD フィード.
Panasonic Semiconductor
56
MIP0223SY - Silicon MOS
Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip .
Panasonic
43
MIP531 - IPD
www.DataSheet.co.kr Realizing the simplification of power Supply and downsizing IPD for switching power supply （MIP531) Overview MIP531 supporting.
Panasonic Semiconductor
38
MIP0222SY - Silicon MOS IC
Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip .
Panasonic
37
MIP2K3 - (MIP2Kx) High-Performance IPD
Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby! High-Performance IPD with Frequency Jitter for Sma.
Panasonic
33
MIP2M20MS - Silicon MOS FET
MIP2M20MS Silicon MOS FET type integrated circuit Features AC input detecting function By connecting SO terminal, it is able to select functions .
Panasonic
31
MIP289 - Silicon MOS type integrated circuit
www.DataSheet4U.com (IPD) MIP289 MOS I • • , • IPD • 150 µA , , , IPD 1 2 3 4 6.3±0.2 Unit : mm +0 0.25 –0.05 MOSFET CMOS , 9.4±0.3 8 7 5 .10 .
Panasonic
27
MIP9E02 - Power Units
High efficiency, reduced dimension and space for power circuits of household appliances Power Units with Built-in Non-insulated Power Supply IPD MIP9E.
Panasonic
26
MIP2E2DMY - Silicon MOSFET
MIP2E2DMY MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 0.585 A IDP 0.82 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ • TO-220-A.
Panasonic
24
MIP2E3DMY - Silicon MOSFET
(IPD) MIP2E3DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.
Panasonic
23
MIP2K5 - (MIP2Kx) High-Performance IPD
Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby! High-Performance IPD with Frequency Jitter for Sma.
Panasonic
22
MIP9E01 - Power Units
High efficiency, reduced dimension and space for power circuits of household appliances Power Units with Built-in Non-insulated Power Supply IPD MIP9E.
Panasonic Semiconductor
20
MIP164 - Silicon MOS IC
Be sure to visit ChipDocs site for more information http://www.chipdocs.com Be sure to visit ChipDocs site for more information http://www.chipdocs.c.
Panasonic
20
MIP2E7DMY - Silicon MOSFET
MIP2E7DMY MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 3.5 A IDP 4.9 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ • TO-220-A2 •.
Panasonic
18
MIP2K4 - (MIP2Kx) High-Performance IPD
Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby! High-Performance IPD with Frequency Jitter for Sma.
Panasonic
18
MIP3E40MY - Silicon MOSFET
MIP3E40MY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.5 IDP 2.3 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control ■ • TO-22.
Panasonic
17
MIP3E50MY - Intelligent Power Device
MIP3E50MY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.98 IDP 3.1 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control ■ • TO-2.
Panasonic
16
MIP2K2 - (MIP2Kx) High-Performance IPD
Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby! High-Performance IPD with Frequency Jitter for Sma.
Panasonic
15
MIP3E30MP - Silicon MOS type integrated circuit
(IPD) MIP3E30MP MOS ■ • (MIP2ExD • • 50% ) 8 9.4±0.3 Unit : mm +0 0.25 -0.05 .10 7 5 7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2 ■ • 1 2 3 4 2.54±0.25 ■ .