Panasonic MIP Datasheet | Specifications & PDF Download

www.DataSheet.co.kr Realizing the simplification of power Supply and downsizing IPD for switching power supply （MIP531) „ Overview MIP531 supporting

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インテリジェントパワーデバイス (IPD) MIP2F20MS シリコン MOS  　  のを  のをに  になを の, にえ, (フ の ) とを  　  ( ほか )  ACアダプタ  Ta = 25°C±3°C ドレイン VCC VDD フィード

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Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip

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High efficiency, reduced dimension and space for power circuits of household appliances Power Units with Built-in Non-insulated Power Supply IPD MIP9E

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MIP2L50MY Silicon MOS FET type integrated circuit  Features  Reducing the average noise Adding a frequency jitter function to MIP2E/3Exx series to d

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Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip

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Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip

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MIP2L40MY Silicon MOS FET type integrated circuit  Features  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dr

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Product Standards MIP2L30MTSCF Type Application Structure Equivalent Circuit Out Line Silicon MOSFET type Integrated Circuit For Switching Power Su

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www.DataSheet4U.com (IPD) MIP2E5DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2

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(IPD) MIP3E30MP MOS ■ • (MIP2ExD • • 50% ) 8 9.4±0.3 Unit : mm +0 0.25 -0.05 .10 7 5 7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2 ■ • 1 2 3 4 2.54±0.25 ■

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Be sure to visit ChipDocs site for more information http://www.chipdocs.com Be sure to visit ChipDocs site for more information http://www.chipdocs.c

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Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby High-Performance IPD with Frequency Jitter for Sma

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Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby High-Performance IPD with Frequency Jitter for Sma

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MIP2M20MS Silicon MOS FET type integrated circuit  Features  AC input detecting function By connecting SO terminal, it is able to select functions

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インテリジェントパワーデバイス (IPD) MIP2G50MD シリコン MOS  　  ピークの PWM , のドレインピーク の (でを )  フィードバックのによりを  , , タイマを  CLによるILIMIT2 りえで , ILIMITのが  (VCC ) のラッチ

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MIP2K20MS Silicon MOS FET type integrated circuit  Features  Built-in jitter function  Built-in charge protection circuit Built-in overheating, loa

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インテリジェントパワーデバイス (IPD) MIP414SMS シリコン MOS  　  は , RCC ( ボトムオン ) により , ・ ノイズをし , はドレインピークのに れるというにより , のをするとと もに , トランスをにできます。  の (VCC) から , IPD の

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MIP2E2DMY MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 0.585 A IDP 0.82 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ • TO-220-A

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