Polyfet RF Devices Datasheet | Specifications & PDF Download

polyfet rf devices P121 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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polyfet rf devices P122 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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polyfet rf devices P124 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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polyfet rf devices GX3442 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for b

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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www.DataSheet4U.com polyfet rf devices Power RF Amplifiers Power = 5.0 Watts Bandwidth = 225 to 400 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input

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www.DataSheet4U.com polyfet rf devices Power RF Amplifiers Power = 10.0 Watts Bandwidth = 380 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Inpu

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polyfet rf devices LX802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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www.DataSheet4U.com polyfet rf devices Power RF Amplifiers Power = 10.0 Watts Bandwidth = 136 to 174 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Inpu

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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www.DataSheet4U.com polyfet rf devices Power RF Amplifiers Power = 10.0 Watts Bandwidth = 300 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Inpu

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polyfet rf devices LQ821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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polyfet rf devices Power RF Amplifiers Power = 30 Watts 450 to 470 Mhz Vdd =12.5 Volts Bandwidth = Gain = 25 dB www.DataSheet4U.com PHM003 50 ohms I

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polyfet rf devices LK802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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polyfet rf devices General Description LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband R

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www.DataSheet4U.com polyfet rf devices Power RF Amplifiers Power = 3 Watts Bandwidth = 400 to 520 Mhz Gain = 24 dB Vdd = 7.5 Volts PHM008 50 ohms I

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polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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