Pt100 Datasheet | Specifications & PDF Download

Cable Sensor, Pt100/Pt1000 Sensors with 4-wire silicone cable for pockets or tubes 4-wire air sensors Elements in 1/1 DIN B, 1/3 DIN B and 1/6 DIN B T

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Cable Sensor, Pt100/Pt1000 Sensors with 4-wire silicone cable for pockets or tubes 4-wire air sensors Elements in 1/1 DIN B, 1/3 DIN B and 1/6 DIN B T

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General-Purpose Silicon PlanarPhototransistor Optoelectronic Products 4-35 FPT100/A/B FPT110/A/B General Description The FPT 100 and FPT 11 0 are 3-

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Multi-Standard Analog HD/SD Video Transmitter PT1000lKfor DaYi Rev 0.5 tia Last Update : 26. June. 2018 nfiden 6th Floor, 105, Gwanggyo-ro, Yeongtong-

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www.DataSheet4U.com Inductance tested at 1 KHz, <10 gauss and 0 Adc DC Resistance at 25°C Rated Idc based on 40°C maximum rise from 25°C ambient with

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General-Purpose Silicon PlanarPhototransistor Optoelectronic Products 4-35 FPT100/A/B FPT110/A/B General Description The FPT 100 and FPT 11 0 are 3-

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APT10090BLL APT10090SLL 1000V 12A 0.950Ω POWER MOS 7 MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode po

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APT10021JFLL 1000V 37A 0.210W POWER MOS 7TM FREDFET S G D S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode

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APT10090BFLL APT10090SFLL 1000V 12A 0.900W BFLL D3PAK TO-247 POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-C

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Pt100 Platinum Sensing Resistors Pt100 Elements, Thin Film (100 Ohm) • Pt100 elements to IEC 751 Class A & B • For use from –50oC to +550oC • Thin f

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General-Purpose Silicon PlanarPhototransistor Optoelectronic Products 4-35 FPT100/A/B FPT110/A/B General Description The FPT 100 and FPT 11 0 are 3-

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APT10050JVFR 1000V 19A 0.500Ω S G D S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE

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APT10086SVR 1000V 13A 0.860Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno

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APT10057WVR 1000V 17.3A 0.570Ω POWER MOS V ® TO-267 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new

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APT10045B2LL APT10045LLL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both con

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D TO-247 G S APT1004RBN ® 1000V 4.4A 4.00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10

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D TO-220 G S APT1004RKN APT1004R2KN 1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAX

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APT10086BLC APT10086SLC 1000V 13A 0.860W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mod

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HF-LPT100 Low Power WiFi Module User Manual HF-LPT100 Low Power WiFi Module User Manual V 1.7 High-Flying Overview of Characteristic  Support IEEE8

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APT10045JFLL 1000V 21A 0.46 Ω POWER MOS 7 R FREDFET G S D SOT-227 S Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancem

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