Pt100 Datasheet | Specifications & PDF Download

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Cable Sensor, Pt100/Pt1000 Sensors with 4-wire silicone cable for pockets or tubes 4-wire air sensors Elements in 1/1 DIN B, 1/3 DIN B and 1/6 DIN B T

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D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1

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Cable Sensor, Pt100/Pt1000 Sensors with 4-wire silicone cable for pockets or tubes 4-wire air sensors Elements in 1/1 DIN B, 1/3 DIN B and 1/6 DIN B T

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APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE

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D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10

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APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno

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VPT100-2800S Series HIGH RELIABILITY COTS DC-DC CONVERTERS DESCRIPTION The VPT100 series of isolated COTS DC-DC converters is a cost effective soluti

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APT10090BLL APT10090SLL 1000V 12A 0.950Ω POWER MOS 7 MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode po

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General-Purpose Silicon PlanarPhototransistor Optoelectronic Products 4-35 FPT100/A/B FPT110/A/B General Description The FPT 100 and FPT 11 0 are 3-

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APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new t

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D TO-247 G S APT1004RBN ® 1000V 4.4A 4.00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10

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1000V 12A 0.900W APT10090BLL APT10090SLL BLL D3PAK TO-247 POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhan

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Typical Performance Curves APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL 1000V 8A 1.60Ω D3PAK POWER MOS 7 ® R FREDFET TO-247 Power MOS 7 is a

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Multi-Standard Analog HD/SD Video Transmitter PT1000lKfor DaYi Rev 0.5 tia Last Update : 26. June. 2018 nfiden 6th Floor, 105, Gwanggyo-ro, Yeongtong-

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D TO-247 G S APT1002RBN ® 1000V 7.0A 2.00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10

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APT10090BFLL APT10090SFLL 1000V 12A 0.900W BFLL D3PAK TO-247 POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-C

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www.DataSheet4U.com APT100GT120JR 1200V, 100A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage po

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TYPICAL PERFORMANCE CURVES ® APT100GT60JR 600V www.DataSheet4U.com APT100GT60JR Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high

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