R600 Datasheet | Specifications & PDF Download

MMD70R600P Datasheet MMD70R600P 700V 0.6Ω N-channel MOSFET  Description MMD70R600P is power MOSFET using magnachip’s advanced super junction technol

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MMD70R600Q Datasheet MMD70R600Q 700V 0.6Ω N-channel MOSFET  Description MMD70R600Q is power MOSFET using Magnachip’s advanced super junction technol

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WSJM65R600S Super-Junction Power MOSFET Rev.01 - 29 April 2024 Product data sheet 1. General description WSJM65R600S is a high voltage N-channel MOS

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CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Q

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JIEJIE MICROELECTRONICS CO. , Ltd JECR6006SL EPI HYPERFAST SOFT RECOVERY RECTIFIER Rev.1.1 DESCRIPTION  Plastic package has underwriters laborator

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NSF65R600C N-channel 650V Super Junction MOSFET Description NSF65R600C is a N-channel power MOSFET designed according to super junction technology. Th

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SLF65R600E7/SLD65R600E7 SLF65R600E7 / SLD65R600E7 650V N-Channel Super-JMOSFET General Description This Power MOSFET is produced using Msemitek‘s

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IPLK80R600P7 MOSFET 800V CoolMOSª P7 Power Device The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and com

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WSJM65R600X Super-Junction Power MOSFET Rev.01 - 22 January 2024 Product data sheet 1. General description WSJM65R600X is a high voltage N-channel M

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WSJM65R600U Super-Junction Power MOSFET Rev.01 - 22 October 2024 Product data sheet 1. General description WSJM65R600U is a high voltage N-channel M

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SLF65R600E7/SLD65R600E7 SLF65R600E7 / SLD65R600E7 650V N-Channel Super-JMOSFET General Description This Power MOSFET is produced using Msemitek‘s

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IPLK60R600PFD7 MOSFET 600V CoolMOSª PFD7 SJ Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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IPLK70R600P7 MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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TPA65R600M,TPB65R600M,TPD65R600M,TPR65R600M,TPU65R600M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super

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TPA65R600M,TPB65R600M,TPD65R600M,TPR65R600M,TPU65R600M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super

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WSJM65R600 Super-Junction Power MOSFET Rev.01 - 22 January 2024 Product data sheet 1. General description WSJM65R600 is a high voltage N-channel MOS

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R6006ANX-VB R6006ANX-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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TPA65R600M,TPB65R600M,TPD65R600M,TPR65R600M,TPU65R600M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super

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TPA65R600M,TPB65R600M,TPD65R600M,TPR65R600M,TPU65R600M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super

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SKN 600, SKR 600 VRSM V 400 800 1200 1600 Stud Diode Rectifier Diode SKN 600 SKR 600 Symbol IFAV IFSM Features  Reverse voltages up to 1600 V 

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