MINIATURE RELAY 2 POLES—1 to 2 A (FOR SIGNAL SW.
Integrated Silicon Solution
IS66WV51216DBLL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM
hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JUL.
UPM
MMBT3906W - PNP GENERAL PURPOSE SWITCHING TRANSISTOR
.007(.20)MIN .103(2.60) .086(2.20) UPM MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage Range 40 Volts Power 150 Watts Features * PNP epi.
ISSI
IS66WV51216ALL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High-speed access time: 55ns • C.
Innogration
AC3236W - 0.2GHz to 1GHz 4W Power Amplifier
AC3236W 0.2GHz to 1GHz 4W Power Amplifier Features 200~1000MHz Frequency Range 3.3V~5.0V Operation 32dB Gain 36dBm P1dB @VCC=5V 250mA Quiescent Curre.
Samsung
KA22067 - 4.6W AUDIO POWER AMP (GENERAL DESCRIPTION)
3UHOLPLQDU\ éïç:ý$8',2ý32:(5ý$03 .$ëëíçæ *(1(5$/ý'(6&5,37,21 ìëð6,3+ð% 7KHý.$ëëíçæýLVýDýWZRýFKDQQHOýSRZHUýDPSOLILHUýZLWKýéïç:ýW\SLð FDOýRXWSXWýRQýì.
Diodes
DRDNB16W - (DRD xxxx W) Complex Array for Relay Drivers
SPICE MODELS: DRDPB26W DRDN005W DRDN010W DRDNB16W DRDNB26W DRDP006W DRDPB16W Features NEW PRODUCT • • • • • • • • • • • Epitaxial Planar Die Const.
ISSI
IS66WVC4M16ALL - 64Mb Async/Page/Burst CellularRAM
IS66WVC4M16ALL IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseud.
ISSI
IS66WV51216BLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High-speed access time: 55ns • C.
ISSI
IS66WV51216EBLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216EALL IS66/67WV51216EBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features High-Speed access time : - 70n.
ISSI
IS66WV51216EALL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216EALL IS66/67WV51216EBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features High-Speed access time : - 70n.
Murata
PV36W200C01 - Trimmer Potentiometers
Note • Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this catalog to prevent smoking and/or b.
Allegro Microsystems
STRA6159 - Universal Input / 13 or 16W Flyback Switching Regulator
g n i h tors c t i a Sw egul R STR-A6151 AND STR-A6159 Universal-Input/13 or 16 W Flyback Switching Regulators The STR-A6151 and STR-A6159 are PRC t.
Integrated Silicon Solution
IS66WV51216DALL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM
hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JUL.
NXP
BAP51-06W - General purpose PIN diode
BAP51-06W General purpose PIN diode Rev. 01 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in com.
Kexin
MMBT3906W - General Purpose Transistor
SMD Type General Purpose Transistor MMBT3906W TransistIoCrs Features General purpose transistor. Pb?Free package is available. 1 Emitter 2 Base 3 .
TT
OP506W - NPN Phototransistors
OP505, OP505W, OP506, OP506W OP535, OP705 Features: T-1 package style Variety of sensitivity ranges Choice of narrow or wide receiving angle S.
ISSI
IS66WVC4M16EALL - 64Mb Async/Page/Burst CellularRAM
IS66WVC4M16EALL/CLL IS67WVC4M16EALL/CLL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16EALL/CLL is an integrated memory device containi.
ISSI
IS66WVO8M8DBLL - 64Mb OctalRAM 1.8V/3.0V SERIAL PSRAM MEMORY
IS66WVO8M8DALL/BLL IS67WVO8M8DALL/BLL 64Mb OctalRAM 1.8V/3.0V SERIAL PSRAM MEMORY WITH 200MHZ DTR OPI (OCTAL PERIPHERAL INTERFACE) PROTOCOL DATA SHEET.
Sanyo Semicon Device
LC72346W - Ultralow-Voltage ETR Controller
Ordering number : ENN*6651 CMOS IC LC72346W, 72347W Ultralow-Voltage ETR Controller with On-Chip LCD Driver Preliminary Overview The LC72346W and LC.
Siemens Semiconductor Group
BFP136W - NPN Silicon RF Transistor
BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electro.