RB-606 Datasheet | Specifications & PDF Download

www.eicsemi.com RBV600 - RBV610 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High current capability * High surge

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C6D06065Q 6th Generation 650 V, 6 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Bar

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C3D06060A Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 8.5 A Qc = 16 nC • • •

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C6D06065E 650 V, 6 A, Silicon Carbide Schottky Diode Features • New 6th generation technology • Low forward voltage drop (VF) • Zero reverse recovery

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Bridge Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) Single Shot Electrical Characteristics (Ta = 25°C) Tstg (°C)

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SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes RBU601M THRU RBU607M FEATURES * Low leakag

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www.DataSheet4U.com STPSC606 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independ

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C3D06060G 600 V, 6 A Silicon Carbide Schottky Diode Features • 600-Volt Schottky rectifier • Zero reverse recovery current • Zero forward recovery vol

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C3D06060F 3rd Generation 600 V, 6 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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C3D16065A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = 650 V IF (TC=135˚C) = 18 A Qc =  44.5 nC • 6

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APA1606VRBXF/A-5MAV 1.6 x 0.6 mm Right Angle SMD Chip LED Lamp DESCRIPTIONS The source color devices are made with InGaN Light Emitting Diode Electros

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C6D06065G 650 V, 6 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, pow

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C3D06065A 3rd Generation 650 V, 6 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C3D16065D1 3rd Generation 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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E6D16065H E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

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C3D06065I Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 650-Volt Schottky Rectifier • Ceramic Package Provides 2.5kV Isolation • Zer

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Production specification Silicon Bridge Rectifiers FEATURES z Ideal for printed circuit board z Reliable low cost construction utilizing molded plast

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Bridge Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) Single Shot Electrical Characteristics (Ta = 25°C) Tstg (°C)

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C3D06060G ® Silicon Carbide Schottky Diode VRRM = Qc = 600 V Z-Rec Rectifier Features IF (TC=135˚C) = 9.5 A 16 nC Package • • •

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C3D06060F Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier (Full-Pak) Features Package IF (TC=58˚C) = 6 A Qc = 16 nC • •

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