Part number:
STPSC606
Manufacturer:
File Size:
123.98 KB
Description:
Schottky barrier 600 v power schottky silicon carbide diode.
* No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows
STPSC606 Datasheet (123.98 KB)
STPSC606
123.98 KB
Schottky barrier 600 v power schottky silicon carbide diode.
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