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STPSC806 Datasheet - ST Microelectronics

Schottky Barrier 600 V power Schottky silicon carbide diode

STPSC806 General Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns .

STPSC806 Datasheet (110.59 KB)

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Datasheet Details

Part number:

STPSC806

Manufacturer:

STMicroelectronics ↗

File Size:

110.59 KB

Description:

Schottky barrier 600 v power schottky silicon carbide diode.

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STPSC806 Schottky Barrier 600 power Schottky silicon carbide diode ST Microelectronics

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