Part number:
STPSC806
Manufacturer:
File Size:
110.59 KB
Description:
Schottky barrier 600 v power schottky silicon carbide diode.
STPSC806_STMicroelectronics.pdf
Datasheet Details
STPSC806_STMicroelectronics.pdf
Datasheet Details
Part number:
STPSC806
Manufacturer:
File Size:
110.59 KB
Description:
Schottky barrier 600 v power schottky silicon carbide diode.
STPSC806, Schottky Barrier 600 V power Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
Due to the Schottky construction no recovery is shown at turn-off and ringing patterns
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