Datasheet Details
Part number:
STPSC8H065DLF
Manufacturer:
File Size:
377.26 KB
Description:
650v power schottky silicon carbide diode.
STPSC8H065DLF-STMicroelectronics.pdf
Datasheet Details
Part number:
STPSC8H065DLF
Manufacturer:
File Size:
377.26 KB
Description:
650v power schottky silicon carbide diode.
STPSC8H065DLF, 650V power Schottky silicon carbide diode
This 8 A, 650 V, SiC diode is an ultra-high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and r
STPSC8H065DLF Features
* Less than 1 mm height package
* High creepage package
* No or negligible reverse recovery
* Temperature independent switching behavior
* High forward surge capability
* Low drop forward voltage
* Power efficient product
* ECOPACK2 com
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