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STPSC1206 Datasheet - ST Microelectronics

STPSC1206 600V power Schottky silicon carbide diode

These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics. The recovery characteristics are independent of the temperature..

STPSC1206_STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC1206

Manufacturer:

STMicroelectronics ↗

File Size:

108.33 KB

Description:

600v power schottky silicon carbide diode.

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STPSC1206 STPSC1206 600V power Schottky silicon carbide diode ST Microelectronics

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