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STPSC1206

600V power Schottky silicon carbide diode

STPSC1206 Features

* No reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode Description These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating.

STPSC1206 General Description

These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics. The recovery characteristics are independent of the temperature..

STPSC1206 Datasheet (108.33 KB)

Preview of STPSC1206 PDF

Datasheet Details

Part number:

STPSC1206

Manufacturer:

STMicroelectronics ↗

File Size:

108.33 KB

Description:

600v power schottky silicon carbide diode.

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STPSC1206 600V power Schottky silicon carbide diode ST Microelectronics

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