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STPSC12065

650V power Schottky silicon carbide diode

STPSC12065 Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Dedicated to PFC applications

* High forward surge capability

* Operating Tj from -40 °C to 175 °C

* D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

STPSC12065 General Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patter.

STPSC12065 Datasheet (433.74 KB)

Preview of STPSC12065 PDF

Datasheet Details

Part number:

STPSC12065

Manufacturer:

STMicroelectronics ↗

File Size:

433.74 KB

Description:

650v power schottky silicon carbide diode.

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STPSC12065 650V power Schottky silicon carbide diode STMicroelectronics

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