Datasheet Details
Part number:
STPSC12065
Manufacturer:
File Size:
433.74 KB
Description:
650v power schottky silicon carbide diode.
STPSC12065-STMicroelectronics.pdf
Datasheet Details
Part number:
STPSC12065
Manufacturer:
File Size:
433.74 KB
Description:
650v power schottky silicon carbide diode.
STPSC12065, 650V power Schottky silicon carbide diode
The SiC diode is an ultra high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing patter
STPSC12065 Features
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Dedicated to PFC applications
* High forward surge capability
* Operating Tj from -40 °C to 175 °C
* D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
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