Datasheet Details
Part number:
STPSC12H065
Manufacturer:
File Size:
99.72 KB
Description:
650v power schottky silicon carbide diode.
STPSC12H065-STMicroelectronics.pdf
STPSC12H065-STMicroelectronics.pdf
Datasheet Details
Part number:
STPSC12H065
Manufacturer:
File Size:
99.72 KB
Description:
650v power schottky silicon carbide diode.
STPSC12H065, 650V power Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern
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