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STPSC12H065

650V power Schottky silicon carbide diode

STPSC12H065 Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Dedicated to PFC applications

* High forward surge capability Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufact

STPSC12H065 General Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern.

STPSC12H065 Datasheet (99.72 KB)

Preview of STPSC12H065 PDF

Datasheet Details

Part number:

STPSC12H065

Manufacturer:

STMicroelectronics ↗

File Size:

99.72 KB

Description:

650v power schottky silicon carbide diode.

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STPSC12H065 650V power Schottky silicon carbide diode STMicroelectronics

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