Part number:
STPSC1006
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File Size:
92.19 KB
Description:
Schottky silicon carbide diode.
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 600 V rating.
Due to the Schottky construction no recovery is shown at turn-off and ringing patterns
STPSC1006_STMicroelectronics.pdf
Datasheet Details
STPSC1006
92.19 KB
Schottky silicon carbide diode.
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