Datasheet4U Logo Datasheet4U.com

STPSC1006 Datasheet - ST Microelectronics

STPSC1006 - Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 600 V rating.

Due to the Schottky construction no recovery is shown at turn-off and ringing patterns

STPSC1006_STMicroelectronics.pdf

Preview of STPSC1006 PDF
STPSC1006 Datasheet Preview Page 2 STPSC1006 Datasheet Preview Page 3

Datasheet Details

Part number:

STPSC1006

Manufacturer:

STMicroelectronics ↗

File Size:

92.19 KB

Description:

Schottky silicon carbide diode.

📁 Related Datasheet

STPSC10065 STPSC10065DLF STPSC1006D STPSC10H065 STPSC10H065-Y STPSC10H065BY-TR

📌 All Tags

STPSC1006 Schottky silicon carbide diode ST Microelectronics