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STPSC1006 Datasheet - ST Microelectronics

STPSC1006 Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns.

STPSC1006_STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC1006

Manufacturer:

STMicroelectronics ↗

File Size:

92.19 KB

Description:

Schottky silicon carbide diode.

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STPSC1006 STPSC1006 Schottky silicon carbide diode ST Microelectronics

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