STPSC10H065G2 - high surge silicon carbide power Schottky diode
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ri
STPSC10H065G2 Features
* No or negligible reverse recovery
* Switching behavior independent of temperature
* High forward surge capability
* Operating Tj from -40 °C to 175 °C
* Power efficient product
* D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
