Datasheet4U Logo Datasheet4U.com

STPSC10H065G2 Datasheet - STMicroelectronics

STPSC10H065G2 high surge silicon carbide power Schottky diode

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ri.

STPSC10H065G2 Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* High forward surge capability

* Operating Tj from -40 °C to 175 °C

* Power efficient product

* D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

STPSC10H065G2 Datasheet (377.74 KB)

Preview of STPSC10H065G2 PDF
STPSC10H065G2 Datasheet Preview Page 2 STPSC10H065G2 Datasheet Preview Page 3

Datasheet Details

Part number:

STPSC10H065G2

Manufacturer:

STMicroelectronics ↗

File Size:

377.74 KB

Description:

High surge silicon carbide power schottky diode.

📁 Related Datasheet

STPSC10H065 power Schottky silicon carbide diode (STMicroelectronics)

STPSC10H065-Y Automotive 650V power Schottky silicon carbide diode (STMicroelectronics)

STPSC10H065BY-TR Schottky silicon carbide diode (STMicroelectronics)

STPSC10H065DLF power Schottky silicon carbide diode (STMicroelectronics)

STPSC10H12 power Schottky silicon carbide diode (STMicroelectronics)

STPSC10H12-Y Automotive grade 1200V power Schottky silicon carbide diode (STMicroelectronics)

STPSC10H12G2Y-TR silicon carbide power Schottky diode (STMicroelectronics)

STPSC1006 Schottky silicon carbide diode (ST Microelectronics)

TAGS

STPSC10H065G2 high surge silicon carbide power Schottky diode STMicroelectronics

STPSC10H065G2 Distributor