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STPSC10H065G2 Datasheet - STMicroelectronics

STPSC10H065G2 high surge silicon carbide power Schottky diode

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ri.

STPSC10H065G2 Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* High forward surge capability

* Operating Tj from -40 °C to 175 °C

* Power efficient product

* D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

STPSC10H065G2-STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC10H065G2

Manufacturer:

STMicroelectronics ↗

File Size:

377.74 KB

Description:

High surge silicon carbide power schottky diode.

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