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STPSC10H065BY-TR Datasheet - STMicroelectronics

STPSC10H065BY-TR Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern.

STPSC10H065BY-TR Features

* AEC-Q101 qualified

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* Recommended to PFC applications

* PPAP capable

* ECOPACK compliant component Applications

* On board charger (OBC)

STPSC10H065BY-TR-STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC10H065BY-TR

Manufacturer:

STMicroelectronics ↗

File Size:

343.28 KB

Description:

Schottky silicon carbide diode.

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