STPSC10H065BY-TR - Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern
STPSC10H065BY-TR Features
* AEC-Q101 qualified
* No reverse recovery charge in application current range
* Switching behavior independent of temperature
* Recommended to PFC applications
* PPAP capable
* ECOPACK compliant component Applications
* On board charger (OBC)
