STPSC10H065 - power Schottky silicon carbide diode
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ri
STPSC10H065 Features
* No reverse recovery charge in application current range
* Switching behavior independent of temperature
* High forward surge capability
* Insulated package TO-220AC Ins:
* Insulated voltage: 2500 VRMS
* Typical package capacitance: 7 pF
* Pow
