Datasheet4U Logo Datasheet4U.com

STPSC10H065 Datasheet - STMicroelectronics

STPSC10H065 - power Schottky silicon carbide diode

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ri

STPSC10H065 Features

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* High forward surge capability

* Insulated package TO-220AC Ins:

* Insulated voltage: 2500 VRMS

* Typical package capacitance: 7 pF

* Pow

STPSC10H065-STMicroelectronics.pdf

Preview of STPSC10H065 PDF
STPSC10H065 Datasheet Preview Page 2 STPSC10H065 Datasheet Preview Page 3

Datasheet Details

Part number:

STPSC10H065

Manufacturer:

STMicroelectronics ↗

File Size:

396.57 KB

Description:

Power schottky silicon carbide diode.

📁 Related Datasheet

📌 All Tags