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STPSC10H065 Datasheet - STMicroelectronics

STPSC10H065 power Schottky silicon carbide diode

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ri.

STPSC10H065 Features

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* High forward surge capability

* Insulated package TO-220AC Ins:

* Insulated voltage: 2500 VRMS

* Typical package capacitance: 7 pF

* Pow

STPSC10H065-STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC10H065

Manufacturer:

STMicroelectronics ↗

File Size:

396.57 KB

Description:

Power schottky silicon carbide diode.

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