STPSC10H12 Datasheet, Diode, STMicroelectronics

STPSC10H12 Features

• Diode
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
• Operating from -40 °C to 175 °C

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Part number:

STPSC10H12

Manufacturer:

STMicroelectronics ↗

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426.28kb

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📄 Datasheet

Description:

Power schottky silicon carbide diode. The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manuf

STPSC10H12 Application

• Applications this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted

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STPSC10H12

STMicroelectronics

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