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STPSC10H12 Datasheet - STMicroelectronics

STPSC10H12 power Schottky silicon carbide diode

The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky .

STPSC10H12-STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC10H12

Manufacturer:

STMicroelectronics ↗

File Size:

426.28 KB

Description:

Power schottky silicon carbide diode.

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