STPSC10H12 power Schottky silicon carbide diode

STMicroelectronics

Description

STPSC10H12 Datasheet 1200 V power Schottky silicon carbide diode A K A K TO-220AC K K K A K DPAK HV 2L K DO-247 LL A K A NC D²PAK .
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier.

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Datasheet Specifications

Part number: STPSC10H12
Manufacturer: STMicroelectronics ↗
File Size: 426.28 KB
Datasheet: STPSC10H12-STMicroelectronics.pdf
Description: power Schottky silicon carbide diode

Features

* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* Operating from -40 °C to 175 °C
* Low VF

Applications

* this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Product status STPSC10H12 Table 1. Device summary Symbol IF(AV)

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STPSC10H12 power Schottky silicon carbide diode STMicroelectronics

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