Datasheet4U Logo Datasheet4U.com

STPSC10H12G2Y-TR Datasheet - STMicroelectronics

STPSC10H12G2Y-TR - silicon carbide power Schottky diode

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and

STPSC10H12G2Y-TR Features

* AEC-Q101 qualified

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high voltage periphery

* PPAP capable

* Operating Tj from -40 °C to 175 °C

* Low VF

* D²PAK HV creepage distance (anode to

STPSC10H12G2Y-TR-STMicroelectronics.pdf

Preview of STPSC10H12G2Y-TR PDF
STPSC10H12G2Y-TR Datasheet Preview Page 2 STPSC10H12G2Y-TR Datasheet Preview Page 3

Datasheet Details

Part number:

STPSC10H12G2Y-TR

Manufacturer:

STMicroelectronics ↗

File Size:

372.40 KB

Description:

Silicon carbide power schottky diode.

📁 Related Datasheet

📌 All Tags