STPSC10H12G2Y-TR - silicon carbide power Schottky diode
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and
STPSC10H12G2Y-TR Features
* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* PPAP capable
* Operating Tj from -40 °C to 175 °C
* Low VF
* D²PAK HV creepage distance (anode to
