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STPSC10H12G2Y-TR Datasheet - STMicroelectronics

STPSC10H12G2Y-TR silicon carbide power Schottky diode

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and.

STPSC10H12G2Y-TR Features

* AEC-Q101 qualified

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high voltage periphery

* PPAP capable

* Operating Tj from -40 °C to 175 °C

* Low VF

* D²PAK HV creepage distance (anode to

STPSC10H12G2Y-TR Datasheet (372.40 KB)

Preview of STPSC10H12G2Y-TR PDF

Datasheet Details

Part number:

STPSC10H12G2Y-TR

Manufacturer:

STMicroelectronics ↗

File Size:

372.40 KB

Description:

Silicon carbide power schottky diode.

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STPSC10H12G2Y-TR silicon carbide power Schottky diode STMicroelectronics

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