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STPSC10H12G2Y-TR silicon carbide power Schottky diode

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Description

STPSC10H12G2Y-TR Datasheet Automotive 1200 V, 10 A, silicon carbide power Schottky diode A1 K K A A NC D²PAK HV Product label Product status link.
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode.

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Features

* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* PPAP capable
* Operating Tj from -40 °C to 175 °C
* Low VF
* D²PAK HV creepage distance (anode to

Applications

* On board charger (OBC)
* DC/DC

STPSC10H12G2Y-TR Distributors

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STPSC10H12G2Y-TR silicon carbide power Schottky diode STMicroelectronics
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