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STPSC10H065DLF Datasheet - STMicroelectronics

STPSC10H065DLF power Schottky silicon carbide diode

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and .

STPSC10H065DLF Features

* Less than 1 mm height package

* High creepage package

* No or negligible reverse recovery

* Temperature independent switching behavior

* High forward surge capability

* Very low drop forward voltage

* Power efficient product

* ECOPACK

STPSC10H065DLF-STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC10H065DLF

Manufacturer:

STMicroelectronics ↗

File Size:

381.10 KB

Description:

Power schottky silicon carbide diode.

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