STPSC10H065DLF - power Schottky silicon carbide diode
This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and
STPSC10H065DLF Features
* Less than 1 mm height package
* High creepage package
* No or negligible reverse recovery
* Temperature independent switching behavior
* High forward surge capability
* Very low drop forward voltage
* Power efficient product
* ECOPACK
