STPSC1006D Datasheet, Diode, STMicroelectronics

STPSC1006D Features

• Diode
• No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC

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STPSC1006D

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STMicroelectronics ↗

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📄 Datasheet

Description:

600 v power schottky silicon carbide diode. The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandga

STPSC1006D Application

• Applications NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMA

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STPSC1006D

STMicroelectronics

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