Part number:
STPSC1006D
Manufacturer:
File Size:
114.40 KB
Description:
600 v power schottky silicon carbide diode.
STPSC1006D_STMicroelectronics.pdf
Datasheet Details
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
Due to the Schottky construction no recovery is shown at turn-off and ringing patterns
STPSC1006D_STMicroelectronics.pdf
Datasheet Details
STPSC1006D
114.40 KB
600 v power schottky silicon carbide diode.
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