Part number:
STPSC1006D
Manufacturer:
File Size:
114.40 KB
Description:
600 v power schottky silicon carbide diode.
* No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap
STPSC1006D Datasheet (114.40 KB)
STPSC1006D
114.40 KB
600 v power schottky silicon carbide diode.
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