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STPSC1006D

600 V power Schottky silicon carbide diode

STPSC1006D Features

* No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap

STPSC1006D General Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns .

STPSC1006D Datasheet (114.40 KB)

Preview of STPSC1006D PDF

Datasheet Details

Part number:

STPSC1006D

Manufacturer:

STMicroelectronics ↗

File Size:

114.40 KB

Description:

600 v power schottky silicon carbide diode.

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STPSC1006D 600 power Schottky silicon carbide diode STMicroelectronics

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