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STPSC10065

Schottky silicon carbide diode

STPSC10065 Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Dedicated to PFC applications

* High forward surge capability

* Operating Tj from -40 °C to 175 °C

* D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

STPSC10065 General Description

This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and r.

STPSC10065 Datasheet (389.55 KB)

Preview of STPSC10065 PDF

Datasheet Details

Part number:

STPSC10065

Manufacturer:

STMicroelectronics ↗

File Size:

389.55 KB

Description:

Schottky silicon carbide diode.

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STPSC10065 Schottky silicon carbide diode STMicroelectronics

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