STPSC10065 Datasheet - STMicroelectronics

STPSC10065 - Schottky silicon carbide diode

This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and r

STPSC10065 Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Dedicated to PFC applications

* High forward surge capability

* Operating Tj from -40 °C to 175 °C

* D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

Datasheet Details

STPSC10065

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Schottky silicon carbide diode.

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