Part number:
STPSC10065
Manufacturer:
File Size:
389.55 KB
Description:
Schottky silicon carbide diode.
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and r
STPSC10065 Features
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Dedicated to PFC applications
* High forward surge capability
* Operating Tj from -40 °C to 175 °C
* D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
STPSC10065-STMicroelectronics.pdf
Datasheet Details
STPSC10065
389.55 KB
Schottky silicon carbide diode.
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