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STPSC12C065-Y Datasheet - STMicroelectronics

STPSC12C065-Y Automotive 650V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern.

STPSC12C065-Y Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Dedicated to PFC applications

* High forward surge capability

* AEC-Q101 qualified

* PPAP capable

* ECOPACK®2 compliant component Datasheet - production data

STPSC12C065-Y-STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC12C065-Y

Manufacturer:

STMicroelectronics ↗

File Size:

160.96 KB

Description:

Automotive 650v power schottky silicon carbide diode.

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