STPSC12C065-Y Datasheet (STMicroelectronics) - Automotive 650V power Schottky silicon carbide diode

STPSC12C065-Y, Automotive 650V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern

STPSC12C065-Y Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Dedicated to PFC applications

* High forward surge capability

* AEC-Q101 qualified

* PPAP capable

* ECOPACK®2 compliant component Datasheet - production data