STPSC12H065C Datasheet - STMicroelectronics

Datasheet Details

Part number:

STPSC12H065C

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98.49 KB

Description:

Power schottky silicon carbide diode.

STPSC12H065C, power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern

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