STPSC12065-Y Automotive 650V 12A silicon carbide power Schottky diode

STMicroelectronics

Description

STPSC12065-Y Datasheet Automotive 650 V, 12 A, silicon carbide power Schottky diode A K K K A K TO-220AC K K A NC D²PAK A A NC D²PAK HV Product l.
The SiC diode is an ultra high performance power Schottky diode.

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Datasheet Specifications

Part number: STPSC12065-Y
Manufacturer: STMicroelectronics ↗
File Size: 453.80 KB
Datasheet: STPSC12065-Y-STMicroelectronics.pdf
Description: Automotive 650V 12A silicon carbide power Schottky diode

Features

* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature

Applications

* High forward surge capability
* PPAP capable
* Operating Tj from -40 °C to 175 °C
* VRRM guaranteed from -40 to +175 °C
* D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
* ECOPACK®2 compliant Applications
* On

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STPSC12065-Y Automotive 650V 12A silicon carbide power Schottky diode STMicroelectronics

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