STPSC12065-Y Datasheet (STMicroelectronics) - Automotive 650V 12A silicon carbide power Schottky diode

STPSC12065-Y, Automotive 650V 12A silicon carbide power Schottky diode

The SiC diode is an ultra high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Due to the Schottky construction, no recovery is shown at turn-off

STPSC12065-Y Features

* AEC-Q101 qualified

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Dedicated to PFC applications

* High forward surge capability

* PPAP capable

* Operating Tj from -40 °C to 175 °C

* VRRM guarante