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STPSC12065-Y Datasheet - STMicroelectronics

STPSC12065-Y Automotive 650V 12A silicon carbide power Schottky diode

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off .

STPSC12065-Y Features

* AEC-Q101 qualified

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Dedicated to PFC applications

* High forward surge capability

* PPAP capable

* Operating Tj from -40 °C to 175 °C

* VRRM guarante

STPSC12065-Y Datasheet (453.80 KB)

Preview of STPSC12065-Y PDF

Datasheet Details

Part number:

STPSC12065-Y

Manufacturer:

STMicroelectronics ↗

File Size:

453.80 KB

Description:

Automotive 650v 12a silicon carbide power schottky diode.

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STPSC12065-Y Automotive 650V 12A silicon carbide power Schottky diode STMicroelectronics

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