Datasheet4U Logo Datasheet4U.com

STPSC8H065 Datasheet - STMicroelectronics

STPSC8H065 650V 8A high surge silicon carbide power Schottky diode

This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and rin.

STPSC8H065 Features

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* High forward surge capability

* Insulated package TO-220AC Ins:

* Insulated voltage: 2500 VRMS

* Typical package capacitance: 7 pF

* Pow

STPSC8H065 Datasheet (360.06 KB)

Preview of STPSC8H065 PDF
STPSC8H065 Datasheet Preview Page 2 STPSC8H065 Datasheet Preview Page 3

Datasheet Details

Part number:

STPSC8H065

Manufacturer:

STMicroelectronics ↗

File Size:

360.06 KB

Description:

650v 8a high surge silicon carbide power schottky diode.

📁 Related Datasheet

STPSC8H065-Y Automotive 650V 8A high surge silicon carbide power Schottky diode (STMicroelectronics)

STPSC8H065DLF 650V power Schottky silicon carbide diode (STMicroelectronics)

STPSC806 Schottky Barrier 600 V power Schottky silicon carbide diode (ST Microelectronics)

STPSC806D 600 V power Schottky silicon carbide diode (STMicroelectronics)

STPSC8TH13TI Dual 650V power Schottky silicon carbide diode (STMicroelectronics)

STPSC1006 Schottky silicon carbide diode (ST Microelectronics)

STPSC10065 Schottky silicon carbide diode (STMicroelectronics)

STPSC10065DLF power Schottky silicon carbide diode (STMicroelectronics)

TAGS

STPSC8H065 650V high surge silicon carbide power Schottky diode STMicroelectronics

STPSC8H065 Distributor