Datasheet4U Logo Datasheet4U.com

STPSC806D

600 V power Schottky silicon carbide diode

STPSC806D Features

* No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap

STPSC806D General Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns .

STPSC806D Datasheet (115.08 KB)

Preview of STPSC806D PDF

Datasheet Details

Part number:

STPSC806D

Manufacturer:

STMicroelectronics ↗

File Size:

115.08 KB

Description:

600 v power schottky silicon carbide diode.

📁 Related Datasheet

STPSC806 Schottky Barrier 600 V power Schottky silicon carbide diode (ST Microelectronics)

STPSC8H065 650V 8A high surge silicon carbide power Schottky diode (STMicroelectronics)

STPSC8H065-Y Automotive 650V 8A high surge silicon carbide power Schottky diode (STMicroelectronics)

STPSC8H065DLF 650V power Schottky silicon carbide diode (STMicroelectronics)

STPSC8TH13TI Dual 650V power Schottky silicon carbide diode (STMicroelectronics)

STPSC1006 Schottky silicon carbide diode (ST Microelectronics)

STPSC10065 Schottky silicon carbide diode (STMicroelectronics)

STPSC10065DLF power Schottky silicon carbide diode (STMicroelectronics)

STPSC1006D 600 V power Schottky silicon carbide diode (STMicroelectronics)

STPSC10H065 power Schottky silicon carbide diode (STMicroelectronics)

TAGS

STPSC806D 600 power Schottky silicon carbide diode STMicroelectronics

Image Gallery

STPSC806D Datasheet Preview Page 2 STPSC806D Datasheet Preview Page 3

STPSC806D Distributor