Part number:
STPSC806D
Manufacturer:
File Size:
115.08 KB
Description:
600 v power schottky silicon carbide diode.
* No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap
STPSC806D Datasheet (115.08 KB)
STPSC806D
115.08 KB
600 v power schottky silicon carbide diode.
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