STPSC8TH13TI Datasheet (STMicroelectronics) - Dual 650V power Schottky silicon carbide diode

STPSC8TH13TI, Dual 650V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern

STPSC8TH13TI Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Suited for specific bridge-less topologies

* High forward surge capability

* Insulated package:

* Capacitance: 7 pF

* Insulated voltage: 2500 V rms Datasheet - production data