STPSC8TH13TI Dual 650V power Schottky silicon carbide diode

STMicroelectronics

Description

STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series ,QVXODWHG72$% .
The SiC diode is an ultrahigh performance power Schottky diode.

📥 Download Datasheet

STPSC8TH13TI Datasheet Preview — Preview of STPSC8TH13TI PDF

Datasheet Specifications

Part number: STPSC8TH13TI
Manufacturer: STMicroelectronics ↗
File Size: 170.55 KB
Datasheet: STPSC8TH13TI-STMicroelectronics.pdf
Description: Dual 650V power Schottky silicon carbide diode

Features

* No or negligible reverse recovery
* Switching behavior independent of temperature
* Suited for specific bridge-less topologies
* High forward surge capability
* Insulated package:
* Capacitance: 7 pF
* Insulated voltage: 2500 V rms Datasheet - production data

STPSC8TH13TI Distributors

📁 Related Datasheet

STPSC806 STPSC1006 STPSC1206 STPSC406 STPSC606 STPS0520M

📌 All Tags

STPSC8TH13TI Dual 650V power Schottky silicon carbide diode STMicroelectronics

STMicroelectronics STPSC8TH13TI-like datasheet