STPSC8TH13TI Dual 650V power Schottky silicon carbide diode

STMicroelectronics

Description

STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series ,QVXODWHG72$% .
The SiC diode is an ultrahigh performance power Schottky diode.

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Datasheet Specifications

Part number: STPSC8TH13TI
Manufacturer: STMicroelectronics ↗
File Size: 170.55 KB
Datasheet: STPSC8TH13TI-STMicroelectronics.pdf
Description: Dual 650V power Schottky silicon carbide diode

Features

* No or negligible reverse recovery
* Switching behavior independent of temperature
* Suited for specific bridge-less topologies
* High forward surge capability
* Insulated package:
* Capacitance: 7 pF
* Insulated voltage: 2500 V rms Datasheet - production data

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Dual 650V power Schottky silicon carbide diode STMicroelectronics

STMicroelectronics STPSC8TH13TI-like datasheet