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STPSC8H065-Y Automotive 650V 8A high surge silicon carbide power Schottky diode

STPSC8H065-Y Description

STPSC8H065-Y Datasheet Automotive 650 V, 8 A high surge silicon carbide power Schottky diode AK K A A NC D²PAK HV K KA NC DPAK Product label Prod.
The SiC diode is an ultra-high performance power Schottky diode.

STPSC8H065-Y Features

* AEC-Q101 qualified

STPSC8H065-Y Applications

* PPAP capable
* VRRM guaranteed from -40 to 175 °C
* D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
* ECOPACK®2 compliant component Applications

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Automotive 650V high surge silicon carbide power Schottky diode STMicroelectronics
STMicroelectronics STPSC8H065-Y-like datasheet