STPSC8H065-Y Datasheet (STMicroelectronics) - Automotive 650V 8A high surge silicon carbide power Schottky diode

STPSC8H065-Y, Automotive 650V 8A high surge silicon carbide power Schottky diode

The SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing patter

STPSC8H065-Y Features

* AEC-Q101 qualified

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* Recommended to PFC applications

* PPAP capable

* VRRM guaranteed from -40 to 175 °C

* D²PAK HV creepage distance (a