STPSC8H065-Y Datasheet, Diode, STMicroelectronics

STPSC8H065-Y Features

• Diode
• AEC-Q101 qualified
• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• Recommended to PFC appli

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Part number:

STPSC8H065-Y

Manufacturer:

STMicroelectronics ↗

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401.81kb

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📄 Datasheet

Description:

Automotive 650v 8a high surge silicon carbide power schottky diode. The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band

STPSC8H065-Y Application

• Applications
• PPAP capable
• VRRM guaranteed from -40 to 175 °C
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm m

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