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STPSC8H065-Y Datasheet - STMicroelectronics

STPSC8H065-Y Automotive 650V 8A high surge silicon carbide power Schottky diode

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patter.

STPSC8H065-Y Features

* AEC-Q101 qualified

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* Recommended to PFC applications

* PPAP capable

* VRRM guaranteed from -40 to 175 °C

* D²PAK HV creepage distance (a

STPSC8H065-Y-STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC8H065-Y

Manufacturer:

STMicroelectronics ↗

File Size:

401.81 KB

Description:

Automotive 650v 8a high surge silicon carbide power schottky diode.

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