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STPSC6H065 Datasheet - STMicroelectronics

STPSC6H065 650V power Schottky silicon carbide diode

This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and rin.

STPSC6H065 Features

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* High forward surge capability

* Insulated package TO-220AC Ins:

* Insulated voltage: 2500 VRMS

* Typical package capacitance: 7 pF

* Pow

STPSC6H065 Datasheet (361.27 KB)

Preview of STPSC6H065 PDF

Datasheet Details

Part number:

STPSC6H065

Manufacturer:

STMicroelectronics ↗

File Size:

361.27 KB

Description:

650v power schottky silicon carbide diode.

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STPSC6H065 650V power Schottky silicon carbide diode STMicroelectronics

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