RF-IF Datasheet | Specifications & PDF Download

ABF22 THRU ABF210 Technical Data Data Sheet N1841, Rev. A ABF22 THRU ABF 210 SINGLE PHASE 2.0AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER ABF

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Features S2ABF THRU S2MBF Surface Mount General Purpose Silicon Rectifiers * For surface mounted applications * Low profile package * Glass Passiva

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RF3396General Purpose Amplifier RF3396 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: QFN, 12-Pin, 3 x 3 Features „ DC

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IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard S

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Technical Data Data Sheet N1693, Rev. A ABS2 THRU ABS10 ABS2 THRU ABS10 SINGLE PHASE 0.8AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER ABS Fe

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MOSPEC MB05F Thru MB10F .157(4.0) .142(3.6) .043(1.1) .027(0.7) .276(7.0) .260(6.6) SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES ●Rati

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www.DataSheet4U.com PD - 91437B IRF9540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperat

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AM-145 / AMC-145 High Performance Amplifier, 11 dB Gain, 10 - 1000 MHz Features  2.5 dB Typical Midband Noise Figure  +19 dBm Typical Midband Output

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AM-145 / AMC-145 High Performance Amplifier, 11 dB Gain, 10 - 1000 MHz Features  2.5 dB Typical Midband Noise Figure  +19 dBm Typical Midband Output

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® OPA134 OPA2134 OPA4134 OPA134 OPA2134 OPA4134 OPA134 OPA2134 OPA4134 TM High Performance AUDIO OPERATIONAL AMPLIFIERS FEATURES q SUPERIOR S

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VC7916 RF Power Amplifier For Quad‐Band  GSM/GPRS/EDGE /TD‐SCDMA/TD‐LTE With  SP16T Antenna Switch Product ID：VC7916 Version：V1.0 Vanchip Technologi

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U1620G thru U1660G ® U1620G thru U1660G Pb Pb Free Plating Product 16 Ampere Surface Mount Common Cathode Ultra Fast Recovery Rectifier Feature

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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PD - 9.1568B PRELIMINARY l l l l l IRF7317 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MO

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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AMPLITUDE(dBuV/m) CS8326S EMI Spectrum

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www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

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PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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