RF-MICROWAVE Datasheet | Specifications & PDF Download

Model C8A50Z4A Surface Mount Termination 8 Watts, 50Ω Description The C8A50Z4A is high performance Alumina (Al203) Surface Mount termination intended

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SD1855 (TCC20L25) RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . . . . 2.0 GHz 20 VOLTS CLASS A OVERLAY GEOMETRY GOLD METALL

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea

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SD1542-42 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS (min.) IFF 1030 or 1090 MHz RE

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Model RFP-100-XXAE-S Full Flange Attenuators 100 Watts General Specifications Resistive Element Substrate Cover Mounting Flange Thick film Beryllium o

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AM81214-060 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSW

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SD1563 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . . 350 WATTS @ 10 µSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250 µ SEC PULSE WI

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Model RFP-100-XXAE-S Full Flange Attenuators 100 Watts General Specifications Resistive Element Substrate Cover Mounting Flange Thick film Beryllium o

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Model RFP-100-XXAE-S Full Flange Attenuators 100 Watts General Specifications Resistive Element Substrate Cover Mounting Flange Thick film Beryllium o

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SD1446 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS . . . . . . 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION P OUT = 70 W MI

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AiT Semiconductor Inc. www.ait-ic.com A3356 100mA, 5.0GHz, 12V, NPN SILICON EPITAXIAL MICROWAVE LOW NOISE RF TRANSISTOR DESCRIPTION FEATURES The A

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SD1463 (TCC0204-125) RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION POUT = 12

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Feat

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5

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HiRel NPN Silicon RF Transistor Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For l

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Data Sheet 5.9 GHz to 23.6 GHz, Wideband, Microwave Upconverter ADRF6780 FEATURES GENERAL DESCRIPTION Wideband RF output frequency range: 5.9 GHz

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF607 Fea

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