RFM Datasheet | Specifications & PDF Download

HX4002B 926.0 MHz Preliminary Hybrid Transmitter • Ideal for 926.0 MHz Unlicensed Transmitters in USA and Canada • Self-Contained RF Functions Short

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  RFM63W RFM63W ISM TRANSCEIVER MODULE General Description The RFM63W is a low cost transceiver module operating in the 868 and 915MHz frequency ban

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SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

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RFM69C R F M6 9C IS M T RANS CE IVE R MOD U L E V1.1 GENERAL DESCRIPTION The RFM69C is a transceiver module capable of operation over a wide frequen

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D10040220G TH 401000 MHz GaAs Power Doubler Hybrid D10040220GTH 40-1000MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description The D10

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RFPA2625 Integrated Power Amplifier Module 2496MHz to 2690MHz The RFPA2625 is a broadband three stage power amplifier (PA) designed to operate in Ban

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Features „ Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: y 240 to 480 MHz (RFM110) y 240 to 960 MH

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Features „ Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: y 240 to 480 MHz (RFM110) y 240 to 960 MH

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SGA-1263(Z) DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package

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RFMD + TriQuint = Qorvo RF5410 LTE MMMB PA Module RF5410 is a multi-mode, multi-band (MMMB) linear Power Amplifier Module (PAM) designed for use as t

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SBA5089ZSBA5089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD’s SBA5089Z is a high performance InGaP/

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Semiconductor RFM18N08, RFM18N10, RFP18N08, RFP18N10 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancemen

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Semiconductor RFM6N45, RFP6N45, RFP6N50 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silico

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Semiconductor RFM7N35, RFM7N40, RFP7N35, RFP7N40 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mod

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RF5540 4.9GHz to 5.85GHz Switch and LNA Front End Solution RF5540 4.9GHz TO 5.85GHz SWITCH AND LNA FRONT END SOLUTION Package: QFN, 12-Pin, 2.0mmx2.0

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RFPA5201 5.0V 2.4GHz to 2.5GHz Matched Power Amplifier Package: Laminate, 14-pin,7mm x 7mm x 1mm VCC 1 PA_EN 2 14 VCC3 13 GND Features  POUT =

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Preliminary RFPA5200 3.3V to 5.0V, 2.4GHz to 2.5GHz Integrated PA Module Package: Laminate, 4mm x 4 mm x 1 mm RFIN 1 Input Match Bias Circuit 10

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RFFM4501 3.0V TO 5.0V, 4.9GHz TO 5.85GHz 802.11a/n/ac FRONT END MODULE Package: Laminate, 16-pin, 3.0mm x 3.0mm x 1.05mm LNA_EN C_RX GND 16 15 1

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IRFM224B November 2001 IRFM224B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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IRFM220B November 2001 IRFM220B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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