RG4Y-RG4C High Efficiency Rectifiers VOLTAGE RANG.
LGE
RG4C - High Efficiency Rectifiers
RG4Y-RG4C High Efficiency Rectifiers VOLTAGE RANGE: 70--- 1000 V CURRENT: 2.0--- 3.5 A Features Low cost Diffused junction Low leakage Low forward v.
Sanken electric
RG4C - Ultra-Fast-Recovery Rectifier Diodes
SANKEN ELECTRIC CO., LTD. １ Scope The present specifications shall apply to an RG4C. ２ Outline Type Silicon Diode Structure Resin Molded Applic.
International Rectifier
IRG4CC71KB - IGBT Die
www.DataSheet4U.com PD- 91834A IRG4CC71KB IRG4CC71KB IGBT Die in Wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G E 6 Wafer E.
International Rectifier
IRG4CH40SB - IGBT Die
www.DataSheet4U.com PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C G E 1200 V Size 4 Standard Speed 6 Wafer Electrical Characteristics.
International Rectifier
IRG4CC50WB - IGBT Die
PD- 91836A IRG4CC50WB IRG4CC50WB IGBT Die in Wafer Form C 600 V Size 5 WARP Speed G E 6 Wafer Electrical Characteristics ( Wafer Form ) Parameter.
International Rectifier
IRG4CC50UB - IGBT Die
IRG4CC50UB IGBT Die in Wafer Form PD- 91764A IRG4CC50UB C G E 600 V Size 5 Ultra-Fast Speed 6 Wafer Electrical Characteristics ( Wafer Form ) Pa.
WEJ
RG4C - Silicon And Fast Recovery Rectifiers
RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified .
International Rectifier
IRG4CC20FB - IGBT Die
IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6 Wafer Electrical Characteristics ( Wafer Form ) Paramete.
