RG4C Datasheet | Specifications & PDF Download

IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6 Wafer Electrical Characteristics ( Wafer Form ) Paramete

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PD- 91836A IRG4CC50WB IRG4CC50WB IGBT Die in Wafer Form C 600 V Size 5 WARP Speed G E 6 Wafer Electrical Characteristics ( Wafer Form ) Parameter

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IRG4CC50UB IGBT Die in Wafer Form PD- 91764A IRG4CC50UB C G E 600 V Size 5 Ultra-Fast Speed 6 Wafer Electrical Characteristics ( Wafer Form ) Pa

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www.DataSheet4U.com PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C G E 1200 V Size 4 Standard Speed 6 Wafer Electrical Characteristics

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www.DataSheet4U.com PD- 91834A IRG4CC71KB IRG4CC71KB IGBT Die in Wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G E 6 Wafer E

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RG4Y-RG4C High Efficiency Rectifiers VOLTAGE RANGE: 70--- 1000 V CURRENT: 2.0--- 3.5 A Features Low cost Diffused junction Low leakage Low forward v

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SANKEN ELECTRIC CO., LTD. １ Scope The present specifications shall apply to an RG4C. ２ Outline Type Silicon Diode Structure Resin Molded Applic

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RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified

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