RJ-032 Datasheet | Specifications & PDF Download

Preliminary Datasheet RJL6032DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 3.3  typ. (at

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RJK0323JPD Silicon N Channel MOS FET High Speed Power Switching Features • For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(o

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www.DataSheet4U.com NUMBER:RD-SDRJ-032 DATE : 2003/04/08 -C(REV:1) Single 10/100 BASE-TX Filtered Connector Module MODEL NO. : RJ-032 Features Fully

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Preliminary Datasheet RJK5032DPD 500V - 3A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1.5

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www.DataSheet4U.com RJK0328DPB Silicon N Channel Power MOS FET Power Switching REJ03G1637-0400 Rev.4.00 Apr 10, 2008 Features High speed switching C

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www.DataSheet4U.com RJK0329DPB Silicon N Channel Power MOS FET Power Switching REJ03G1638-0400 Rev.4.00 Apr 10, 2008 Features High speed switching C

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Preliminary Datasheet RJK5032DPH-E0 500V - 3A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1

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Preliminary Datasheet RJK6032DPD 600V - 3A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 3.3  typ. (at ID = 1.5 A, VGS

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Preliminary Datasheet RJL5032DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-state resistance RDS(on) = 2.2 Ω typ. (at

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Preliminary Datasheet RJK6032DPH-E0 600V - 3A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 3.3  typ. (at ID = 1.0 A,

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RJK0328DPB-01 Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High

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