RJ-13 Datasheet | Specifications & PDF Download

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www.DataSheet4U.com RJK6013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1535-0100 Rev.1.00 Apr 04, 2007 Features • Low on-resistan

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Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS

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RJL5013DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • H

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Preliminary www.DataSheet4U.com Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev.

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www.DataSheet.co.kr Mechanicals Dimensions REV. DESCRIPTION DATE DWN AP’PD ELECTRICAL SPECFICATIONS@25℃: Turn Ratio(±5%):1CT:1CT Inductance(100

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RJ45 10/100 BASE-T WITH MAGNETIC MODULE FEATURES ● 1X1 Tab-UP, 1 Long RJ45 with internal magnetics ● 8 or 6-pin signal pin versions available ● Avai

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www.DataSheet4U.com RJK4013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1513-0100 Rev.1.00 Feb 02, 2007 Features • Low on-resistan

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w w w F i n i s a rom .c U Product Specification 4 t e Temperature 2 Gigabit Long-Wavelength Industrial e h Pluggable SFP Transceiver S a FTRJ1319P

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www.DataSheet4U.com RJK5013DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1585-0100 Rev.1.00 Sep 28, 2007 Features • Low on-resistan

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www.DataSheet4U.com RJK5013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1488-0200 Rev.2.00 Nov 29, 2006 Features • Low on-resistan

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www.DataSheet4U.com RJK5013DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1491-0100 Rev.1.00 Nov 30, 2006 Features • Low on-resistan

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RJK4513DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.33 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C

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RJK6013DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1582-0100 Rev.1.00 Sep 11, 2007 Features • Low on-resistance • Low leakage curr

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Preliminary Datasheet RJK6013DPP-E0 600V - 11A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A

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Target Specifications Datasheet RJF0613JSP 60 V - 10 A - N Channel MOS FET Power Switching R07DS0874EJ0100 Rev.1.00 Aug 29, 2012 Description This F

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE013N10RJ3 Spec. No. : C056J3 Issued Date : 2017.04.10 Revised Date : 2020.10.21

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