RJ-13 Datasheet | Specifications & PDF Download

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RJ3 Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. :

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE013N10RJ3 Spec. No. : C056J3 Issued Date : 2017.04.10 Revised Date : 2020.10.21

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On-Bright confidential to OB3613x Series High PF Non-Isolated Buck LED Lighting Power Switch GENERAL DESCRIPTION OB3613x is a high power factor, hig

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On-Bright confidential to OB3613x Series High PF Non-Isolated Buck LED Lighting Power Switch GENERAL DESCRIPTION OB3613x is a high power factor, hig

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Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS

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Preliminary www.DataSheet4U.com Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev.

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www.DataSheet4U.com RJK6013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1535-0100 Rev.1.00 Apr 04, 2007 Features • Low on-resistan

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RJL5013DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • H

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10–15kV SPDTVacuumRelays Rated Operating Voltage (kV Peak) Max Cont.Current (Amps) Contact Capacity (pF) 12 or 115 VDC coil versions available; plea

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www.DataSheet.co.kr Mechanicals Dimensions REV. DESCRIPTION DATE DWN AP’PD ELECTRICAL SPECFICATIONS@25℃: Turn Ratio(±5%):1CT:1CT Inductance(100

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(%) (Rated power ratio) D d FIXED RESISTORS www.DataSheet4U.com INSULATED FIXED METAL FILM RESISTORS FIGURE AND DIMENSIONS (MM) HLH TYPE RJ13A RJ1

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www.DataSheet4U.com RJK4013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1513-0100 Rev.1.00 Feb 02, 2007 Features • Low on-resistan

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RJL5013DPP-E0 500 V - 14 A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at

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RJK6013DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1582-0100 Rev.1.00 Sep 11, 2007 Features • Low on-resistance • Low leakage curr

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Preliminary Datasheet RJL6013DPE Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS

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RJ45 10/100 BASE-T WITH MAGNETIC MODULE FEATURES ● 1X1 Tab-UP, 1 Long RJ45 with internal magnetics ● 8 or 6-pin signal pin versions available ● Avai

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