Rugged Datasheet | Specifications & PDF Download

STGB14NC60KD STGF14NC60KD, STGP14NC60KD 14 A, 600 V - short-circuit rugged IGBT Features ■ Short circuit withstand time 10µs. ■ Low on-voltage drop (

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EURO QUARTZ Rugged construction SMD TCXO Very rugged construction TCXO Industry-standard 7x5mm miniature SMD format Tight tolerances over temperature

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STGIPQ8C60T-HZ Datasheet SLLIMM™ nano - 2nd series IPM, 3-phase inverter, 8 A, 600 V, short‑circuit rugged IGBTs Product status link STGIPQ8C60T-HZ

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STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD Datasheet 14 A, 600 V short-circuit rugged IGBT TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP 1 23 TO-220 C(2, TAB)

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Preface Introduction Installing the Device Communication Ports Technical Specifications Dimension Drawings Installation Guide Certification 1 2 3 4 5

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EURO QUARTZ Rugged construction SMD TCXO Very rugged construction TCXO Industry-standard 7x5mm miniature SMD format Tight tolerances over temperature

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STGB10NC60K 10 A, 600 V short-circuit rugged IGBT Features ■ Low on voltage drop (VCESAT) ■ Short-circuit withstand time 10 µs t(s)Applications c■

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STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES

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STGIF5CH60S-X Datasheet SLLIMM - 2nd series IPM, 3-phase inverter, 8 A, 600 V, short‑circuit rugged IGBT 18 26 17 Marking area 1 17 18 1 26 SDI

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ICE3AR2280JG Fixed-Frequency, 800V CoolSET™ in DS0-12 Package Product Highlights  800 V avalanche rugged CoolMOS™ with startup cell  Active Burst

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Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery ch

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Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION Glass passivated high efficiency rugged dual rec

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Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery ch

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DISCRETE SEMICONDUCTORS DATA SHEET BYW29EB, BYW29ED series Rectifier diodes ultrafast, rugged Product specification November 1998 NXP Semiconducto

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DISCRETE SEMICONDUCTORS DATA SHEET BYW29EB, BYW29ED series Rectifier diodes ultrafast, rugged Product specification November 1998 NXP Semiconducto

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Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery ch

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Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery ch

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STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet - production data TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-

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STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features ■ Low on-losses ■ High current capability ■ Low gate

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STGB19NC60KD, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no

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